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August 2002
AO8802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8802 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
Features
VDS (V) = 20V ID = 8A RDS(ON) < 13m (VGS = 10V) RDS(ON) < 14m (VGS = 4.5V) RDS(ON) < 19m (VGS = 2.5V) RDS(ON) < 27m (VGS = 1.8V)
TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 S1
D1
D2
G2 S2
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum 20 12 8 6.3 30 1.5 1.08 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 64 89 53
Max 83 120 70
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO8802
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=8A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=5A VGS=2.5V, ID=4A VGS=1.8V, ID=3A gFS VSD IS Forward Transconductance VDS=5V, ID=8A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.5 30 10 13.3 11.5 15.4 22.2 36 0.73 1 2.4 1810 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 232 200 1.6 19.8 VGS=4.5V, VDS=10V, ID=8A 1.8 5 3.3 VGS=10V, VDS=10V, RL=1.3, RGEN=3 IF=8A, dI/dt=100A/s 5.9 44 7.7 22 9.8 13 16 14 19 27 0.75 Min 20 10 25 100 1 Typ Max Units V A nA V A m m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/s
2
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO8802 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40 35 30 25 ID (A) 20 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 30 Normalized On-Resistance 25 RDS(ON) (m) 20 VGS=2.5V 15 VGS=4.5V 10 VGS=10V 5 0 5 10 15 20 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=1.8V 1.6 ID=5A 1.4 VGS=4.5V VGS=2.5V VGS=1.5V 5 25C 0 0 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics 0.5 2.5 ID(A) 20 15 10 125C 10 2.5V 4.5V 30 2V 25 VDS=5V
VGS=10V 1.2 VGS=1.8V
1
40 35 30 RDS(ON) (m) 25 20 15 10 5 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C IS (A) ID=5A
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C
125C
Alpha and Omega Semiconductor, Ltd.
AO8802 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=10V ID=8A Capacitance (pF) 3000 2500 2000 1500 1000 500 0 0 Coss Crss 5 10 15 20 Ciss
VDS (Volts) Figure 8: Capacitance Characteristics
100.0
40 RDS(ON) limited TJ(Max)=150C TA=25C Power (W) 100s 1ms 10ms 10s 30
10.0 ID (Amps)
20
1.0 TJ(Max)=150C TA=25C 0.1 0.1 1
1s
0.1s
10s DC 10 VDS (Volts) 100
10
0 0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=83C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSSOP-8 Package Data
SYMBOLS
DIMENSIONS IN MILLIMETERS
DIMENSIONS IN INCHES
A A1 A2 b c D E E1 e L y
MIN --- 0.05 0.80 0.19 0.09 2.90 4.30 0.45 --- 0
NOM --- --- 1.00 --- --- 3.00 6.40 BSC 4.40 0.65 BSC 0.60 --- ---
MAX 1.20 0.15 1.05 0.30 0.20 3.10 4.50 0.75 0.10 8
MIN --- 0.002 0.031 0.007 0.004 0.114 0.169 0.018 --- 0
NOM --- --- 0.039 --- --- 0.118 0.252 BSC 0.173 0.0259 (REF) 0.024 --- ---
MAX 0.047 0.006 0.041 0.012 0.008 0.122 0.177 0.030 0.004 8
NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE
PACKAGE MARKING DESCRIPTION
RECOMMENDED LAND PATTERN
NOTE: LOGO - AOS LOGO 8802 - PART NUMBER CODE. F - FAB LOCATION A - ASSEMBLY LOCATION W - WEEK CODE. LN - ASSEMBLY LOT CODE
TSSOP-8 PART NO. CODE
PART NO. AO8802
CODE 8802
PART NO.
CODE
PART NO.
CODE
UNIT: mm
Rev. A
ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSSOP-8 Carrier Tape
TSSOP-8 Tape and Reel Data
TSSOP-8 Reel
TSSOP-8 Tape
Leader / Trailer & Orientation

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